data sheet semiconductor http://www.yeashin.com 1 rev.03 20130115 db151s thru db157s single-p h ase glass passi vated voltage range 50 to 1000 volts current 1.5 am pere fe a t ures ?e surge ov erload r a ting - 6 0 amper es peak ?e ideal for printed circui t b oard ?e relia ble l o w cost con s tru c tio n u t ili zin g molded ?e glass pa ssiv a ted dev ice ?e polari ty sy mbols molded on body ?e m o u n ting po si tio n : a n y ?e w e i ght: 1.0 gram ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e epoxy : dev i ce h a s ul fl a mmability cla ssi fi cati on 94 v-0 ?e ul li sted the recognized componen t dire cto r y , file #e94 233 m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ?e ra ting s a t 25 oc ambient temper atur e unle s s o t herw i se spe c ifie d. ?e single pha se, hal f w a v e , 60 hz, resi stiv e or indu ctiv e load. ?e for capa citiv e lo ad, dera t e curre nt b y 20%. m a xim u m r a t i ngs ( a t t a = 2 5 oc u n less ot h e r w ise noted) ra t i n g s sy m b ol db151s db152s db153s DB154S d b 1 5 5 s d b 1 5 6 s d b 1 5 7 s units m a x i mum recurre n t peak rev e rse v o ltage vrrm 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 volts m a x i mum r m s bri dge i nput vo l t age vrms 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 volts m a x i mum dc blo cking voltage v d c 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 volts m a x i mum a v erag e for w a rd output current at t a = 40 j i o 1 . 5 amps peak for w a rd surge current 8.3 m s single ha lf sine- w av e super i mposed on r a ted l o ad (j edec method) i f s m 6 0 amps t y pical therm a l re sistance r q j a r q j l 40 15 j /w oper ati ng and sto r age tempe r atur e range tj,tstg - 55 to + 150 j electri c a l ch a r a c teri sti c s (a t t a = 25oc unl e ss other w ise note d ) ch a r a c t e r i s t i c s s y m b ol db151s db152s db153s DB154S d b 1 5 5 s d b 1 5 6 s d b 1 5 7 s units m a x i mum for w a rd vol t age dr op pe r b r i dge element at 1.0 a dc v f 1 . 1 v o l t s @t a = 25 j 5 . 0 u a m p s m a x i mum for w a rd vol t age dr op pe r br i dge dc blocking vo lta g e per ele m ent @t a = 125 j ir 0 . 5 u a m p s note: su ffix ?-s? s u rfa c e mou n t fo r di p bridge . unit : inch (mm) sdip . 255 ( 6 . 5 ) . 128 ( 3 . 25 ) . 410 ( 10 . 4 ) .0 11 (.2 8 ) .0 60 (1. 524 ) . 2 0 5 ( 5 . 2 ) . 335 ( 8 . 51 ) .0 45 ( 1.14 ) . 245 ( 6 . 2 ) ( 2 . 60 ) max .0 40 ( 1 . 106 ) . 195 ( 5 . 0 ) . 335 ( 8 . 0 5) .0 35 (0. 89 ) + ~ ~ .102
http://www.yeashin.com 2 rev.03 20130115 db151s thru db157s device characteristics fig.1 der a ting cu r ve for output rectified current fig.3 typical reverse characteristics fig.4 max non-repetitive surge current fig.2 typical fo r w ard characteristics ambient temperature, c o percent of peak reverse voltage, % no.ofcyclesat60hz instantaneous fwd voltage, volts average forward output current, amperes instantaneous reverse current,ua forward surge current, amperes (half sine-wave) instantaneous fwd cuttent, amperes 3.0 2.0 1.0 0 0 50 100 150 1.5 2.5 0.5 t = 100 c a o t=25 c a o 10 1.0 0.1 0.01 0 20 40 60 80 100 120 140 50 40 30 20 10 0 1 2 6 10 20 40 60 100 t=25c pulsewidth=200us j o
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